A Model for Multilevel Phase-Change Memories Incorporating Resistance Drift Effects
نویسندگان
چکیده
منابع مشابه
Enabling Technologies for Multilevel Phase-Change Memory
Phase-change memory (PCM) is currently regarded as the most promising new nonvolatile solid-state memory technology for applications that DRAM and NAND-Flash, today’s incumbent memories, cannot address. Multilevel-cell (MLC) storage, the most effective way of reducing the cost-per-bit in memory technologies, is necessary for PCM to be competitive. MLC capability in PCM is challenging, as proces...
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The crystallization properties of phase-change memory (PCM) in the presence of thermal disturbances are investigated with a novel micro-thermal stage. It is found that the recrystallization time due to thermal disturbances significantly varies depending on how the PCM cell drifts. The longer crystallization time is obtained following additional resistance drift, which can be described by an inc...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2015
ISSN: 2168-6734
DOI: 10.1109/jeds.2014.2357577